| PART |
Description |
Maker |
| N04L163WC1C |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04Q1618C2B N04Q1612C2BX-15C N04Q1618C2BX-15C N04Q |
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K6 bit POWER SAVER TECHNOLOGY
|
AMI SEMICONDUCTOR
|
| N04Q1618C2BX-85C N04Q1612C2BX-15C N04Q1618C2B N04Q |
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
|
AMI[AMI SEMICONDUCTOR]
|
| M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
| HY62LF16404C |
Super Low Power Slow SRAM - 4Mb
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MAX6335US20D3-T MAX6336US20D3-T MAX6337US20D3-T MA |
4-Pin, Ultra-Low-Voltage, Low-Power μP Reset Circuits with Manual Reset
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-high, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 20ms.
4-Pin, Ultra-Low-Voltage, Low-Power P Reset Circuits with Manual Reset
4-Pin / Ultra-Low-Voltage / Low-Power P Reset Circuits with Manual Reset
4-Pin, Ultra-Low-Voltage, Low-Power レP Reset Circuits with Manual Reset 4引脚，超低电压，低功耗与手动复位レP复位电路
2.5-W Mono Class-D Audio Amplifier with Variable Gain (TPA2010) 9-DSBGA -40 to 85 4引脚，超低电压，低功耗与手动复位レP复位电路
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-high, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 1ms.
|
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| M29DW323DB70ZA6 M29DW323DT M29DW323DT70N1E M29DW32 |
CAP 100PF 50V 20% Z5U SMD-0805 TR-7 PLATED-NI/SN
Low-Noise Precision Operational Amplifier 8-SOIC 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 20-LCCC -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双24分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 14-CDIP -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 14-PDIP
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
SGS Thomson Microelectronics
|
| IRFR3910PBF IRFR3910TR IRFR3910TRPBF IRFR3910PBF-1 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
Ultra Low On-Resistance
|
International Rectifier
|
| IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| SIT1534 |
Ultra-Small, Ultra-Low Power 1 Hz ?32.768 kHz Programmable Oscillator
|
SiTime Corp.
|
